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ILA03N60, ilp03n60 ^ ild03n60 power semiconductors 1 rev. 1.3 mar 05 lightmos power transistor ? new high voltage technology designed for zvs-switching in lamp ballasts ? igbt with integrated reverse diode ? 4a current rating for reverse diode ? up to 10 times lower gate capacitance than mosfet ? avalanche rated ? 150c operating temperature ? fullpak isolates 2.5 kv ac (1 min.) ? pb-free lead plating; rohs compliant ? qualified according to jedec 1 for target applications type v ce i c v ce(sat ),tj=25c t j,max marking package ordering code ILA03N60 600v 3.0a 2.9v 150c l03n60 pg-to-220-3-31 q67040-s4626 ilp03n60 600v 3.0a 2.9v 150c l03n60 pg-to-220-3-1 q67040-s4628 ild03n60 600v 3.0a 2.9v 150 c l03n60 pg-to-252-3-1 q67040-s4625 maximum ratings value parameter symbol ILA03N60 others unit collector-emitter voltage v ce 600 v dc collector current t c = 25 c t c = 100 c i c 3 2.2 4.5 3 pulsed collector current, t p limited by t jmax , t p < 10 ms 9 pulsed collector current, t p limited by t jmax i cpuls 5.5 diode forward current t c = 25 c t c = 100 c i f 4 2.2 4 2.5 diode pulsed current, t p limited by t jmax , t p < 10 ms 9 diode pulsed current, t p limited by t jmax i fpuls 5.5 a avalanche energy, single pulse i c =0.4a, v ce =50v e as 0.32 mj gate-emitter voltage v ge 30 v reverse diode d v /d t i c 3a, v ce 450v, t jmax 150c d v /d t 1 2 v/ns power dissipation ( t c = 25 c) p tot 16.5 27 w operating junction and storage temperature t stg -55...+150 soldering temperature pg-to-252: reflow soldering msl3 others: wavesoldering, 1.6 mm (0.063 in.) from case for 10s t s 260 260 c 1 j-std-020 and jesd-022 2 reverse diode of transistor is commutated with same device according to figure c. with application relevant values i c 1.5a, c snubber = 1 nf and r g 50 ? , d v /d t of the reverse diode is within its specification. g c e pg-to-252-3-1 (d-pak) (to-252aa) pg-to-220-3-1 (to-220ab) pg-to-220-3-31 (to-220 fullpak)
ILA03N60, ilp03n60 ^ ild03n60 power semiconductors 2 rev. 1.3 mar 05 thermal resistance parameter symbol conditions max. value unit characteristic igbt thermal resistance, junction ? case r thjc pg-to-220-3-31 other packages 7.6 4.7 diode thermal resistance, junction ? case r thjcd pg-to-220-3-31 other packages 12 10 k/w therm. resistance, junction ? ambient r thja pg-to-220-3-31 pg-to-220-3-1 65 62 smd version, device on pcb: @ min. footprint @ 6cm 2 cooling area 1 r thja pg-to-252-3-1 75 50 1 device on 40mm*40mm*1.5mm epoxy pcb fr4with 6cm 2 (one layer, 70 m thick) copper area for drain connection. pcb is vertical without blown air. electrical characteristic, at t j = 25 c, unless otherwise specified value parameter symbol conditions min. typ. max. unit static characteristic collector-emitter breakdown voltage v (br)ces v ge =0v, i c =0.5ma 600 - - collector-emitter avalanche breakdown voltage v (br)ce v gs = 0v; i c = 0. 4a - 850 - v ge =10v, i c =3.0a t j =25 c t j =150 c - - 2.3 2.7 2.9 collector-emitter saturation voltage v ce(sat) v ge =10v, i c =0.8a t j =25 c t j =150 c - - 1.5 1.5 - - v ge =0v, i f =3.0a t j =25 c t j =150 c - - 1.5 1.6 1.8 v diode forward voltage v f v ge =0v, i f =0.8a t j =25 c t j =150 c - - 1.0 1.0 - - v gate-emitter threshold voltage v ge(th) i c =30a, v ce = v ge 2.1 3.0 3.9 v
ILA03N60, ilp03n60 ^ ild03n60 power semiconductors 3 rev. 1.3 mar 05 electrical characteristic, at t j = 25 c, unless otherwise specified continued value parameter symbol conditions min. typ. max. unit zero gate voltage collector current i ces v ce =600v , v ge =0v t j =25 c t j =150 c - - 1 - 20 250 a gate-emitter leakage current i ges v ce =0v, v ge =20v - - 100 na transconductance g fs v ce =20v, i c =3.0a - 1.5 - s capacities, gate charge, at t j =25 c value parameter symbol conditions min. typ. max. unit input capacitance c iss - 110 - output capacitance c oss - 6 - reverse transfer capacitance c rss v ce =25v, v ge =0v, f =1mhz - 4 - pf effective output capacitance (energy related) c o(er) v ge =0v, v ce =0v to 480v 3.7 pf gate to emitter charge q ge - 1 - gate to collector charge q gc - 5.5 - gate total charge q g - 8.5 - nc gate plateau voltage v m v ce =400v, i c =3.0a, v ge =10v - 6.5 - v gate to emitter charge q ge - 0.5 - gate to collector charge q gc - 4.0 - gate total charge q g - 8 - nc gate plateau voltage v m v ce =400v, i c =0.8a, v ge =10v - 3.5 - v switching characteristic, inductive load, at t j =25 c value parameter symbol conditions min. typ. max. unit igbt characteristic turn-on delay time t d(on) - 15 - rise time t r - 35 - turn-off delay time t d(off) - 100 - fall time t f - 100 - ns turn-on energy e on 4 - 12 - turn-off energy e off v cc =400v, i c =0.8a, v ge =0/10v, r g =60 ? , c snubber =0nf ( c snubber : snubber capacitor) - 20 - turn-off energy e off c snubber =1nf - 8 - j 4 e on includes sdp04s60 diode commutation losses
ILA03N60, ilp03n60 ^ ild03n60 power semiconductors 4 rev. 1.3 mar 05 switching characteristic, inductive load, at t j =150 c value parameter symbol conditions min. typ. max. unit igbt characteristic turn-on delay time t d(on) - 20 - rise time t r - 45 - turn-off delay time t d(off) - 120 - fall time t f - 120 - ns turn-on energy e on 3 - 15 - turn-off energy e off v cc =400v, i c =0.8a, v ge =0/10v, r g =60 ? , c snubber =0nf ( c snubber : snubber capacitor) - 28 - turn-off energy e off c snubber =1nf - 12 - j switching characteristic, inductive load, at t j =25 c value parameter symbol conditions min. typ. max. unit reverse diode characteristic (switching in half bridge configuration with same transistor according to figure c) reverse recovery time t rr - 90 - ns reverse recovery charge q rr - 0.27 - c peak reverse recovery current i rrm - 5.5 - a peak rate of fall of reverse recovery current di rr /dt v r =400v, i f =0.8a, v ge =0/10v, r g =80 ? - 300 - a/s reverse recovery time t rr - 250 - ns reverse recovery charge q rr - 0.75 - c peak reverse recovery current i rrm - 8 - a peak rate of fall of reverse recovery current di rr /dt v r =400v, i f =3a, v ge =0/10v, r g =80 ? - 300 - a/s
ILA03N60, ilp03n60 ^ ild03n60 power semiconductors 5 rev. 1.3 mar 05 i c , collector current 1v 10v 100v 1000v 0,01a 0,1a 1a 10a 8 s dc 1ms 200 s 50 s 15 s t p =4 s i c , collector current 1v 10v 100v 1000v 0,01a 0,1a 1a 10a 8 s dc 1ms 200 s 50 s 15 s t p =4 s f , switching frequency v ce , collector - emitter voltage figure 1: safe operating area (fullpak) ( d = 0, t c = 25 c, t j 150 c) figure 2: safe operating area (other packages) ( d = 0, t c = 25 c, t j 150 c) p tot , power dissipation 25c 50c 75c 100c 125c 0w 5w 10w 15w 20w 25w 30w fullpak other packages i c , collector current 25 c 50 c 75 c 100 c 125 c 150 c 0a 2a 4a 6a fullpak other packages t c , case temperature t c , case temperature figure 3. power dissipation as a function of case temperature ( t j 150 c) figure 4. collector current as a function of case temperature ( v ge 10v, t j 150 c)
ILA03N60, ilp03n60 ^ ild03n60 power semiconductors 6 rev. 1.3 mar 05 i c , collector current 0v 1v 2v 3v 4v 5v 6v 0a 2a 4a 6a 8a 10a 10v 9v 8v 7v 6v 5v v ge =15v i c , collector current 0v 1v 2v 3v 4v 5v 6v 0a 2a 4a 6a 8a 10a 10v 9v 8v 7v 6v 5v v ge =15v v ce , collector - emitter voltage v ce , collector - emitter voltage figure 5. typical output characteristics ( t j = 25 c) figure 6. typical output characteristics ( t j = 150 c) i c , collector current 0v 2v 4v 6v 8v 10v 12 v 0a 2a 4a 6a 8a +150c t j = +25c v ce(sat) , collector - emitter saturation voltage -50c 0c 50c 100c 150c 1.0v 1.5v 2.0v 2.5v 3.0v 3.5v 4.0v 4.5v i c=0.5a i c=1a i c=3a i c=4a v ge , gate - emitter voltage t j , junction temperature figure 7. typical transfer characteristics ( v ce = 20v) figure 8. typical collector-emitter saturation voltage as a function of junction temperature ( v ge = 10v)
ILA03N60, ilp03n60 ^ ild03n60 power semiconductors 7 rev. 1.3 mar 05 t , switching times 0.5a 1.0a 1.5a 2.0a 2.5a 3.0 a 10ns 100ns t r t d(on) t f t d(off) t , switching times 20 ? 40 ? 60 ? 80 ? 100 ? 120 ? 10ns 100ns t r t d(on) t f t d(off) i c , collector current r g , gate resistor figure 9. typical switching times as a function of collector current (inductive load, t j = 150 c, v ce = 400v, v ge = 0/+10v, r g = 80 ? , dynamic test circuit in figure e) figure 10. typical switching times as a function of gate resistor (inductive load, t j = 150 c, v ce = 400v, v ge = 0/+10v, i c = 1a, dynamic test circuit in figure e) v ge(th) , gate - emitter threshold voltage -50c 0c 50c 100c 150c 2.0v 2.2v 2.4v 2.6v 2.8v 3.0v 3.2v 3.4v e , switching energy losses 0,5a 1,0a 1,5a 2,0a 2,5a 3,0 a 0j 10j 20j 30j 40j 50j 60j 70j 80j e off, c snubber =1nf e on * e off t j , junction temperature i c , collector current figure 12. gate-emitter threshold voltage as a function of junction temperature ( i c = 30a) figure 13. typical switching energy losses as a function of collector current (inductive load, t j = 150 c, v ce = 400v, v ge = 0/+10v, r g = 80 ? , c snubber =0/1nf dynamic test circuit in figure e) *) e on includes losses due to diode recovery.
ILA03N60, ilp03n60 ^ ild03n60 power semiconductors 8 rev. 1.3 mar 05 20 ? 40 ? 60 ? 80 ? 100 ? 120 ? 10j 12j 14j 16j 18j 20j 22j 24j 26j 28j 30j 32j 34j e off e on * e off, c snubber =1nf e , switching energy losses 50c 100c 150 c 5j 10j 15j 20j 25j 30j 35j e off, c snubber =1nf e on * e off r g , gate resistor t j , junction temperature figure 14. typical switching energy losses as a function of gate resistor (inductive load, t j = 150 c, v ce = 400v, v ge = 0/+10v, i c = 1a, c snubber =0/1nf dynamic test circuit in figure e) figure 15. typical switching energy losses as a function of junction temperature (inductive load, v ce = 400v, v ge = 0/+10v, i c = 1a, r g = 80 ? , c snubber =0/1nf dynamic test circuit in figure e) v ge , gate - emitter voltage 0nc 2nc 4nc 6nc 8nc 10nc 12n c 0v 2v 4v 6v 8v 10v 12v 14v 480v 120v v ge , gate - emitter voltage 0nc 2nc 4nc 6nc 8nc 10nc 12n c 0v 2v 4v 6v 8v 10v 12v 14v 480v 120v q ge , gate charge q ge , gate charge figure 16. typical gate charge ( i c = 0.8a) figure 17. typical gate charge ( i c = 3a) *) e on includes losses due to diode recovery. *) e on includes losses due to diode recovery.
ILA03N60, ilp03n60 ^ ild03n60 power semiconductors 9 rev. 1.3 mar 05 z thjct , transient thermal impedance 10s 100s 1ms 10ms 100ms 1s 10s 100 s 10 -1 k/w 10 0 k/w 10 1 k/w 0.01 0.02 0.05 0.1 0.2 single pulse d =0.5 z thjcd , transient thermal impedance t p , pulse width t p , pulse width figure 18: igbt transient thermal impedance as a function of pulse width (fullpak) ( d = t p / t ) figure 19: diode transient thermal impedance as a function of pulse width (fullpak) ( d = t p / t ) z thjct , transient thermal impedance 10s 100s 1ms 10ms 100ms 1 s 10 -1 k/w 10 0 k/w 0.01 0.02 0.05 0.1 0.2 single pulse d =0.5 z thjcd , transient thermal impedance 10s 100s 1ms 10ms 100ms 1s 10 -1 k/w 10 0 k/w 10 1 k/w 0.01 0.02 0.05 0.1 0.2 single pulse d =0.5 t p , pulse width t p , pulse width figure 20: igbt transient thermal impedance as a function of pulse width (other packages) ( d = t p / t ) figure 21: diode transient thermal impedance as a function of pulse width (other packages) ( d = t p / t ) 10s 100s 1ms 10ms 100ms 1s 10s 100s 10 -1 k/w 10 0 k/w 10 1 k/w 0.01 0.02 0.05 0.1 0.2 single pulse d =0.5 r ,(k/w) , (s) 0.907 4.532*10 -2 1.088 5.957*10 -3 3.762 8.797*10 -4 4.043 1.667*10 -4 c 1 = r 1 r 1 r 2 c 2 = r 2 r ,(k/w) , (s) 1.186 0.0466 1.856 2.220*10 -3 1.458 3.616*10 -4 c 1 = r 1 r 1 r 2 c 2 = r 2 r ,(k/w) , (s) 1.76 5.30 2.98 1.59 0.620 0.0719 0.915 0.00654 c 1 = r 1 r 1 r 2 c 2 = r 2 r ,(k/w) , (s) 3.46 3.99 0.798 0.368 0.662 0.00973 1.84 8.52*10 -4 c 1 = r 1 r 1 r 2 c 2 = r 2
ILA03N60, ilp03n60 ^ ild03n60 power semiconductors 10 rev. 1.3 mar 05 i f , forward current 0.0v 0.5v 1.0v 1.5v 0a 1a 2a 3a 4a 100c 150c -55c 25c v f , forward voltage -40c 0c 40c 80c 120c 0.9v 1.0v 1.1v 1.2v 1.3v 1.4v 1.5v 1.6v 1.7v i f =1a i f =0.5a i f =2a i f =4a v f , forward voltage t j , junction temperature figure 20. typical diode forward current as a function of forward voltage figure 21. typical diode forward voltage as a function of junction temperature c , capacitance 0v 10v 20v 30v 40v 10pf 100pf c rss c oss c iss v ce , collector - emitter voltage figure 19. typical capacitance as a function of collector-emitter voltage ( v ge = 0v, f = 1mhz)
ILA03N60, ilp03n60 ^ ild03n60 power semiconductors 11 rev. 1.3 mar 05 v ce 90 % v c e 90 % v ge 10% v ge 10% v c e t d(off) t f t d(on) t r t t 90% v ce 10 % v ce f igure a. definition of sw itching times figure c. dynamic tes t circuit figure b . definition of diodes sw itching characteristics i rrm 90% i rrm 10% i rrm di /dt f t rr i f i,v t q s q f t s t f v r di /dt rr q =q q rr s f + t =t t rr s f + d.u.t (diode) d.u.t (igbt) r ? l ? l c u g
ILA03N60, ilp03n60 ^ ild03n60 power semiconductors 12 rev. 1.3 mar 05 p-to220-3-31 dimensions symbol [mm] [inch] min max min max a 10.37 10.63 0.4084 0.4184 b 15.86 16.12 0.6245 0.6345 c 0.65 0.78 0.0256 0.0306 d 2.95 typ. 0.1160 typ. e 3.15 3.25 0.124 0.128 f 6.05 6.56 0.2384 0.2584 g 13.47 13.73 0.5304 0.5404 h 3.18 3.43 0.125 0.135 k 0.45 0.63 0.0177 0.0247 l 1.23 1.36 0.0484 0.0534 m 2.54 typ. 0.100 typ. n 4.57 4.83 0.1800 0.1900 p 2.57 2.83 0.1013 0.1113 t 2.51 2.62 0.0990 0.1030 please refer to mounting instructions (application note an-to220-3-31-01) dimensions symbol [mm] [inch] min max min max a 9.70 10.30 0.3819 0.4055 b 14.88 15.95 0.5858 0.6280 c 0.65 0.86 0.0256 0.0339 d 3.55 3.89 0.1398 0.1531 e 2.60 3.00 0.1024 0.1181 f 6.00 6.80 0.2362 0.2677 g 13.00 14.00 0.5118 0.5512 h 4.35 4.75 0.1713 0.1870 k 0.38 0.65 0.0150 0.0256 l 0.95 1.32 0.0374 0.0520 m 2.54 typ. 0.1 typ. n 4.30 4.50 0.1693 0.1772 p 1.17 1.40 0.0461 0.0551 t 2.30 2.72 0.0906 0.1071 to-220ab pg-to220-3-31 pg-to220-3-31
ILA03N60, ilp03n60 ^ ild03n60 power semiconductors 13 rev. 1.3 mar 05 dimensions symbol [mm] symbol min min a 6.40 a 6.40 a b 5.25 b 5.25 b c (0.65) c (0.65) c d 0.63 d 0.63 d e 2.28 e f 2.19 f 2.19 f g 0.76 g 0.76 g h 0.90 h 0.90 h k 5.97 k 5.97 k l 9.40 l 9.40 l m 0.46 m 0.46 m n 0.87 n 0.87 n p 0.51 p 0.51 p r 5.00 r 5.00 r s 4.17 s 4.17 s t 0.26 t 0.26 t u - u - u to-252aa (dpak) pg-to252-3-1
ILA03N60, ilp03n60 ^ ild03n60 power semiconductors 14 rev. 1.3 mar 05 published by infineon technologies ag , bereich kommunikation st.-martin-strasse 53, d-81541 mnchen ? infineon technologies ag 2003 all rights reserved. attention please! the information herein is given to describe certain components and shall not be considered as warranted characteristics. terms of delivery and rights to technical change reserved. we hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. infineon technologies is an approved cecc manufacturer. information for further information on technology, delivery terms and conditions and prices please contact your nearest infineon technologies office in germany or our infineon tec hnologies representatives worl dwide (see address list). warnings due to technical requirements components may contain dangerous substances. for information on the types in question please contact your nearest infineon technologies office. infineon technologies components may only be used in life-support devices or systems with the express written approval of infineon technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or e ffectiveness of that device or system. life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. if they fail, it is reasonable to assume that the health of the user or other persons may be endangered.

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